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IKW50N60H3FKSA1 TRANZISTOR IGBT 600V 100A 333W TO247-3

Cod produs: IKW50N60H3FKSA1

Pret: 39.00 Lei / BUCATA

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Comanda instant - IKW50N60H3FKSA1 TRANZISTOR IGBT 600V 100A 333W TO247-3

IKW50N60H3FKSA1 TRANZISTOR IGBT 600V 100A 333W TO247-3

Product Details

Infineon TrenchStop IGBT Transistors, 600 and 650V

A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

• Collector-emitter voltage range 600 to 650V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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